Description
š§ Unleash the Power of Precision!
- COMPACT EFFICIENCY - Designed for optimal performance in power output drivers, making it a must-have for your projects.
- POWERFUL PERFORMANCE - Experience a robust 0.15A continuous collector current for reliable output.
- HIGH VOLTAGE RESILIENCE - Withstands up to 25V collector-base voltage, ensuring durability in demanding applications.
- LOW SATURATION ADVANTAGE - Enjoy a minimal 200mV collector-emitter saturation voltage for efficient operation.
- ENHANCED BREAKDOWN TOLERANCE - Features a 12V high emitter-base breakdown voltage for added safety.
The NTE Electronics NTE102 PNP Germanium Complementary Transistor is engineered for power output driving applications, featuring a continuous collector current of 0.15A and a collector-base voltage rating of 25V. With its low saturation voltage of 200mV and high breakdown tolerance, this transistor is perfect for professionals seeking reliability and efficiency in their electronic designs.
